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Researcher working as a Device Engineer with a good background in the field of custom silicon detectors, Europe/Italia/Trento - Povo



Europe/Italia/Trento - Povo, Italy 

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Job Description:

IRIS Research Unit carries out R&D activities on advanced radiation and image sensors fabricated within both full custom and standard CMOS technologies. The main research activities of the group are on the design and characterization of silicon radiation detectors, single-photon sensors and advanced image sensors.

More information about IRIS is available at http://iris.fbk.eu

Job description

Silicon detectors with internal amplification, such as Silicon Photomultipliers (SiPMs), are currently of great interest in several scientific, medicine and industrial applications, exploiting the extremely high sensitivity and the excellent single-photon time resolution. SiPMs are being evaluated for the detection of signals in the large majority of big scientific experiments planned in the future, from the HL-LHC upgrade to future Dark Matter and Neutrino experiments, but also in commercial applications (nuclear medicine and automotive LiDAR). In this field, FBK is at the forefront of developments, collaborating with CERN, other research institutions and companies for the development of next-generation detectors.

In this context, we are looking for a Device Engineer who will work on the development of next generation low-level light sensors: single photon avalanche diodes (SPADs) and Silicon Photomultipliers (SiPMs). The activity will be focused on the conception of new technological solutions and understanding/improvement of device properties through TCAD simulations and experimental characterization. This will be done in strict collaboration with other device and process engineers. If selected, the candidate will have the opportunity of working and acquiring know-how on one of the currently most innovative and rapidly evolving radiation detector technology, which is of great interest in several industry and science fields.

The ideal candidate will have an electronic engineering or physics background with an emphasis on semiconductor device physics. Experience on circuit electronics, electro-optical characterization techniques and set-ups are preferred.

The ideal candidate should have

  • Master degree in Electronics, Physics or Material Science;
  • Strong background in semiconductor device physics;
  • Enthusiastic attitude to research activity;
  • Good scientific background and ability to write scientific papers;
  • Good knowledge of English (oral and written);
  • Strong teamwork attitude.

Additional requirements

  • PhD in Electronics, Physics or related fields or equivalent 3-years research experience;
  • Background in semiconductor light sensors and their characterization;
  • Knowledge of scintillator-based radiation detectors;
  • Knowledge of silicon processing technology;
  • Scientific publications relevant to the field of detectors in general and on SPAD / SiPMs in particular;
  • Visiting scholarship or experience at international level.


Type of contract: fixed term contract
Working hours: full time
Gross annual salary: about € 34.000,00

Start date: October 2018
Duration: until 30 September 2020

Benefits: flexi-time, company subsidized cafeteria or meal vouchers, internal car park, welcome office support for visa formalities, accommodation, social security, etc., reductions on bank account opening fees, public transportation, sport, language course fees.


Candidates are requested to submit their application by clicking on “Apply Online” at the bottom of this page. Please make sure that your application contains the following attached (pdf.format):

  • detailed CV
  • letter of motivation

Application deadline: 27 August 2018

Please read the Guidelines for Selection before completing the application.

For further information, please contact the Human Resources Service at jobs@fbk.eu

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Fondazione Bruno Kessler

, Italy
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